NP52N055SUG_15 Datasheet, PDF (6/9 Pages) Renesas Technology Corp – SWITCHING N-CHANNEL POWER MOS FET

DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
200
180 ^Pulsed
160
140
120
VGS = 10 V
100
80
60
40
20
0
0 1 2 3 4 5 6 7 8 9 10
VDS - Drain to Source Voltage - V
GATE TO SOURCE THRESHOLD VOLTAGE vs.
CHANNEL TEMPERATURE
4.0
3.5
3.0
2.5
2.0
1.5
1.0
VGS = VDS
0.5
ID = 250 µA
0
-100 -50 0 50 100 150 200
Tch - Channel Temperature - °C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
40
Pulsed
35
30
25
20
15
VGS = 10 V
10
5
0
1
10
100
1000
ID - Drain Current - A
NP52N055SUG
FORWARD TRANSFER CHARACTERISTICS
1000
100
VDS = 10 V
Pulsed
10 ^{TA = −55°C}
−25°C
1
25°C
75°C
125°C
0.1
150°C
175°C
0.01
0.001
0
1234567
VGS - Gate to Source Voltage - V
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
100
TA = −55°C
25°C
10
75°C
125°C
175°C
1
0
0.1
VDS = 10 V
Pulsed
1
10
100
ID - Drain Current - A
1000
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
40
35
Pulsed
30
ID = 42 A
26 A
25
11 A
20
15
10
5
0
0 2 4 6 8 10 12 14 16 18 20
VGS - Gate to Source Voltage - V
4
Data Sheet D16865EJ2V0DS