NP52N055SUG_15 Datasheet, PDF (3/9 Pages) Renesas Technology Corp – SWITCHING N-CHANNEL POWER MOS FET

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP52N055SUG
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The NP52N055SUG is N-channel MOS Field Effect
Transistor designed for high current switching applications.
ORDERING INFORMATION
PART NUMBER
PACKAGE
NP52N055SUG
TO-252 (MP-3ZK)
FEATURES
• Channel temperature 175 degree rating
• Super low on-state resistance
RDS(on) = 14 mΩ MAX. (VGS = 10 V, ID = 26 A)
• Low Ciss: Ciss = 2100 pF TYP.
(TO-252)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
55
V
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) ^Note1
VGSS
±20
V
ID(DC)
±52
A
ID(pulse)
±170
A
Total Power Dissipation (TC = 25°C)
Total Power Dissipation (TA = 25°C)
PT1
56
W
PT2
1.2
W
Channel Temperature
Tch
175
°C
Storage Temperature
Repetitive Avalanche Current ^Note2
Repetitive Avalanche Energy ^Note2
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%
Tstg
−55 to +175 °C
IAR
21
A
EAR
44
mJ
2. Tch ≤ 150°C, VDD = 28 V, RG = 25 Ω, VGS = 20 → 0 V
THERMAL RESISTANCE
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance
Rth(ch-C)
Rth(ch-A)
2.68
125
°C/W
°C/W
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D16865EJ2V0DS00 (2nd edition)
Date Published January 2005 NS CP(K)
Printed in Japan
The mark shows major revised points.
2004