NP48N055EHE_15 Datasheet, PDF (6/12 Pages) Renesas Technology Corp – SWITCHING N-CHANNEL POWER MOS FET

NP48N055EHE, NP48N055KHE, NP48N055CHE, NP48N055DHE, NP48N055MHE, NP48N055NHE
TYPICAL CHARACTERISTICS (TA = 25°C)
Figure1. DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
100
80
60
40
20
0
0 25 50 75 100 125 150 175 200
TC - Case Temperature - °C
Figure2. TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
140
120
100
80
60
40
20
0
0 25 50 75 100 125 150 175 200
TC - Case Temperature - °C
Figure3. FORWARD BIAS SAFE OPERATING AREA
1000
100
10
R^D₍^S_V^{(oGnS) L=im10iteVd)}
ID(DC)
LimPoitweder
DC
Dissipation
ID(pulse)
100
1 _ms
PW
μ_s
=
10
μ_s
1
Single pulse
TC = 25°C
0.1
0.1
1
10
100
VDS - Drain to Source Voltage - V
Figure4. SINGLE AVALANCHE ENERGY
DERATING FACTOR
120
100 mJ
100
78 mJ
80
60
IAS = 10 A
28 A
48 A
40
20
2.3 mJ
0
25 50
75 100 125 150 175
Starting Tch - Starting Channel Temperature - °C
1000
Figure5. TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
100
Rth(ch-A) = 83.3°C/W
10
Rth(ch-C) = 1.76°C/W
1
0.1
0.01
10 μ 100 μ 1 m
10 m 100 m
1
PW - Pulse Width - s
Single pulse
10
100 1000
4
Data Sheet D14094EJ6V0DS