NP48N055EHE_15 Datasheet, PDF (4/12 Pages) Renesas Technology Corp – SWITCHING N-CHANNEL POWER MOS FET

NP48N055EHE, NP48N055KHE, NP48N055CHE, NP48N055DHE, NP48N055MHE, NP48N055NHE
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
55
V
Gate to Source Voltage (VDS = 0 V)
VGSS
±20
V
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) ^Note1
ID(DC)
±48
A
ID(pulse)
±140
A
Total Power Dissipation (TA = 25°C)
PT
1.8
W
Total Power Dissipation (TC = 25°C)
PT
85
W
Channel Temperature
Tch
175
°C
Storage Temperature
Single Avalanche Current ^Note2
Single Avalanche Energy ^Note2
Tstg
−55 to +175 °C
IAS
48/28/10
A
EAS
2.3/78/100 mJ
Notes 1. PW ≤ 10 μs, Duty cycle ≤ 1%
2. Starting Tch = 25°C, RG = 25 Ω, VGS = 20 → 0 V (see Figure 4.)
THERMAL RESISTANCE
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance
Rth(ch-C)
Rth(ch-A)
1.76
°C/W
83.3
°C/W
2
Data Sheet D14094EJ6V0DS