N0600N Datasheet, PDF (6/8 Pages) Renesas Technology Corp – MOS FIELD EFFECT TRANSISTOR

N0600N
Package Drawings (Unit: mm)
Isolated TO-220
10.0±0.3
4.7±0.2
3.2±0.2
2.54±0.2
Chapter Title
Equivalent Circuit
1.47 MAX
0.8±0.2
2.54 TYP.
2.76±0.2
0.50±0.1
2.54 TYP.
1 23
1. Gate
2. Drain
3. Source
Gate
Drain
Body
Diode
Source
Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and
ultimately degrade the device operation. Steps must be taken to stop generation of static
electricity as much as possible, and quickly dissipate it once, when it has occurred.
R07DS0220EJ0100 Rev.1.00
Jan 25, 2011
Page 6 of 6