N0600N Datasheet, PDF (3/8 Pages) Renesas Technology Corp – MOS FIELD EFFECT TRANSISTOR

N0600N
Typical Characteristics (T_A = 25°C)
DERATING FACTOR OF FORWARD BIAS SAFE
OPERATING AREA
120
100
80
60
40
20
0
0 25 50 75 100 125 150 175
T_C - Case Temperature - °C
FORWARD BIAS SAFE OPERATING AREA
100
ID(pulse) = 60 A
PW = 100 μ s
ID(DC) = 30 A
10
PW = 1 ms
RDS(on) Limited
(VGS = 10 V)
Power Dissipation Limited
1
PW = 10 ms
Chapter Title
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
25
20
15
10
5
0
0 25 50 75 100 125 150 175
T_C - Case Temperature - °C
TC = 25°C
Single Pulse
0.1
0.1
1
10
100
V_DS - Drain to Source Voltage - V
1000
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
100
10
Rth(ch-A) = 62.5°C/W
Rth(ch-C) = 6.25°C/W
1
0.1
1m
10 m
100 m
1
10
PW - Pulse Width - s
Single Pulse
100
1000
R07DS0220EJ0100 Rev.1.00
Jan 25, 2011
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