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| N0600N Datasheet, PDF (1/8 Pages) Renesas Technology Corp – MOS FIELD EFFECT TRANSISTOR | |||
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N0600N
MOS FIELD EFFECT TRANSISTOR
Preliminary Data Sheet
R07DS0220EJ0100
Rev.1.00
Jan 25, 2011
Description
The N0600N is N-channel MOS Field Effect Transistor designed for high current switching applications.
Features
⢠Low on-state resistance
⯠RDS(on)1 = 25 m⦠MAX. (VGS =10 V, ID = 15 A)
⯠RDS(on)2 = 36 mΩ MAX. (VGS = 4.5 V, ID = 15 A)
⢠Low input capacitance
⯠Ciss = 1380 pF TYP. (VDS = 10 V, VGS = 0 V)
Ordering Information
Part No.
Lead Plating
Packing
Package
N0600N-S17-AY â1
Pure Sn (Tin)
Tube
Isolated TO-220
50p/tube
typ. 2.2 g
Note: â1. Pb-free (This product does not contain Pb in the external electrode and other parts.)
Absolute Maximum Ratings (TA = 25°C)
Item
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC)
Drain Current (pulse) â1
Total Power Dissipation (TC = 25°C)
Total Power Dissipation (TA = 25°C)
Channel Temperature
Storage Temperature
Single Avalanche Current â2
Single Avalanche Energy â2
Symbol
VDSS
VGSS
ID(DC)
ID(pulse)
PT1
PT2
Tch
Tstg
IAS
EAS
Ratings
60
±20
±30
±60
20
2.0
150
â55 to +150
9.2
12.5
Unit
V
V
A
A
W
W
°C
°C
A
mJ
Thermal Resistance
Channel to Case (Drain) Thermal Resistance Rth(ch-C)
Channel to Ambient Thermal Resistance â2
Rth(ch-A)
6.25
62.5
Notes: â1. PW ⤠10 μs, Duty Cycle ⤠1%
â2. Starting Tch = 25°C, RG = 25 Ω, VDD = 30 V, VGS = 20 â 0 V
°C/W
°C/W
R07DS0220EJ0100 Rev.1.00
Jan 25, 2011
Page 1 of 6
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