HR1_15 Datasheet, PDF (6/8 Pages) Renesas Technology Corp – on-chip resistor PNP silicon epitaxial transistor For mid-speed switching

HR1A4A
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Parameter
Symbol
Collector cutoff current
DC current gain
DC current gain
DC current gain
Collector saturation voltage
Low level input voltage
ICBO
h ^Note
FE1
h Note
FE2
h Note
FE3
V Note
CE(sat)
V ^Note
IL
E-to-B resistance
R2
Note PW ≤ 350 μs, duty cycle ≤ 2 %
Conditions
VCB = −60 V, IE = 0
VCE = −2.0 V, IC = −0.1 A
VCE = −2.0 V, IC = −0.5 A
VCE = −2.0 V, IC = −1.0 A
IC = −500 mA, IB = −10 mA
VCE = −5.0 V, IC = −100 μA
HR1 SERIES
MIN.
TYP.
MAX.
Unit
−100
nA
150
−
100
−
50
−
0.20
0.35
V
−0.3
−1.5
V
7
10
13
kΩ
4
Data Sheet D16184EJ4V0DS