HR1_15 Datasheet, PDF (3/8 Pages) Renesas Technology Corp – on-chip resistor PNP silicon epitaxial transistor For mid-speed switching

DATA SHEET
COMPOUND TRANSISTOR
HR1 SERIES
on-chip resistor PNP silicon epitaxial transistor
For mid-speed switching
FEATURES
• Up to 2A high current drives such as IC outputs and actuators available
• On-chip bias resistor
• Low power consumption during drive
PACKAGE DRAWING (UNIT: mm)
HR1 SERIES LISTS
Products
HR1A3M
HR1F3P
HR1L3N
HR1A4M
HR1L2Q
HR1F2Q
HR1A4A
Marking
MP
MQ
MR
MS
MT
MU
MX
R1 (kΩ)
1.0
2.2
4.7
10
0.47
0.22
−
R2 (kΩ)
1.0
10
10
10
4.7
2.2
10
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
−60
V
Collector to emitter voltage
VCEO
−60
V
Emitter to base voltage
VEBO
−10
V
Collector current (DC)
IC(DC)
−1.0
A
Collector current (Pulse)
I ^Note1
C(pulse)
−2.0
A
Base current (DC)
IB(DC)
−0.02
A
Total power dissipation
P Note2
T
2.0
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
Notes 1. PW ≤ 10 ms, duty cycle ≤ 50 %
2. When 0.7 mm × 16 cm² ceramic board is used
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D16184EJ4V0DS00 (4th edition)
Date Published August 2006 NS CP(K)
Printed in Japan
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
2006