HR1_15 Datasheet, PDF (4/8 Pages) Renesas Technology Corp – on-chip resistor PNP silicon epitaxial transistor For mid-speed switching

HR1A3M
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Parameter
Symbol
Conditions
Collector cutoff current
DC current gain
DC current gain
DC current gain
Low level output voltage
Low level input voltage
ICBO
h ^Note
FE1
h Note
FE2
h Note
FE3
V Note
OL
V Note
IL
VCB = −60 V, IE = 0
VCE = −2.0 V, IC = −0.1 A
VCE = −2.0 V, IC = −0.5 A
VCE = −2.0 V, IC = −1.0 A
VIN = −5.0 V, IC = −0.4 A
VCE = −5.0 V, IC = −100 μA
Input resistance
R1
E-to-B resistance
R2
Note PW ≤ 350 μs, duty cycle ≤ 2 %
HR1F3P
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Parameter
Symbol
Conditions
Collector cutoff current
DC current gain
DC current gain
DC current gain
Low level output voltage
Low level input voltage
ICBO
h ^Note
FE1
h Note
FE2
h Note
FE3
V Note
OL
V Note
IL
VCB = −60 V, IE = 0
VCE = −2.0 V, IC = −0.1 A
VCE = −2.0 V, IC = −0.5 A
VCE = −2.0 V, IC = −1.0 A
VIN = −5.0 V, IC = −0.3 A
VCE = –5.0 V, IC = −100 μA
Input resistance
R1
E-to-B resistance
R2
Note PW ≤ 350 μs, duty cycle ≤ 2 %
HR1L3N
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Parameter
Symbol
Conditions
Collector cutoff current
DC current gain
DC current gain
DC current gain
Low level output voltage
Low level input voltage
ICBO
h ^Note
FE1
h Note
FE2
h Note
FE3
V Note
OL
V Note
IL
VCB = −60 V, IE = 0
VCE = −2.0 V, IC = −0.1 A
VCE = −2.0 V, IC = −0.5 A
VCE = −2.0 V, IC = −1.0 A
VIN = −5.0 V, IC = −0.2 A
VCE = −5.0 V, IC = −100 μA
Input resistance
R1
E-to-B resistance
R2
Note PW ≤ 350 μs, duty cycle ≤ 2 %
HR1 SERIES
MIN.
TYP.
MAX.
Unit
−100
nA
50
−
100
−
50
−
−0.4
V
−0.3
V
0.7
1.0
1.3
kΩ
0.7
1.0
1.3
kΩ
MIN.
TYP.
MAX.
Unit
−100
nA
150
−
100
−
50
−
−0.3
V
−0.3
V
1.54
2.2
2.86
kΩ
7
10
13
kΩ
MIN.
TYP.
MAX.
Unit
−100
nA
150
−
100
−
50
−
−0.3
V
−0.3
V
3.29
4.7
6.11
kΩ
7
10
13
kΩ
2
Data Sheet D16184EJ4V0DS