HD1_15 Datasheet, PDF (6/8 Pages) Renesas Technology Corp – ON-CHIP RESISTOR NPN SILICON EPITAXIAL TRANSISTOR FOR MID-SPEED SWITCHING

HD1A4A
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Parameter
Symbol
Conditions
Collector cutoff current
DC current gain
DC current gain
DC current gain
Collector saturation voltage
Low level input voltage
ICBO
h ^Note
FE1
h Note
FE2
h Note
FE3
V Note
CE(sat)
V ^Note
IL
VCB = 60 V, IE = 0
VCE = 2.0 V, IC = 0.1 A
VCE = 2.0 V, IC = 0.5 A
VCE = 2.0 V, IC = 1.0 A
IC = 0.7 A, IB = 7 mA
VCE = 5.0 V, IC = 100 μA
E-to-B resistance
R2
Note PW ≤ 350 μs, duty cycle ≤ 2 %
HD1 SERIES
MIN.
TYP.
MAX.
Unit
100
nA
200
630
−
300
780
−
200
430
−
0.25
0.4
V
0.5
0.3
V
7
10
13
kΩ
4
Data Sheet D16182EJ4V0DS