HD1_15 Datasheet, PDF (3/8 Pages) Renesas Technology Corp – ON-CHIP RESISTOR NPN SILICON EPITAXIAL TRANSISTOR FOR MID-SPEED SWITCHING

DATA SHEET
COMPOUND TRANSISTOR
HD1 SERIES
on-chip resistor NPN silicon epitaxial transistor
For mid-speed switching
FEATURES
• High current drives such as IC outputs and actuators available
• On-chip bias resistor
• Low power consumption during drive
PACKAGE DRAWING (UNIT: mm)
HD1 SERIES LISTS
Products
HD1A3M
HD1F3P
HD1L3N
HD1A4M
HD1L2Q
HD1F2Q
HD1A4A
Marking
LP
LQ
LR
LS
LT
LU
LX
R1 (kΩ)
1.0
2.2
4.7
10
0.47
0.22
−
R2 (kΩ)
1.0
10
10
10
4.7
2.2
10
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
80
V
Collector to emitter voltage
VCEO
60
V
Emitter to base voltage
VEBO
10
V
Collector current (DC)
IC(DC)
1.0
A
Collector current (Pulse)
I ^Note1
C(pulse)
2.0
A
Base current (DC)
IB(DC)
0.02
A
Total power dissipation
P Note2
T
2.0
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
Notes 1. PW ≤ 10 ms, duty cycle ≤ 50 %
2. When 0.7 mm × 16 cm² ceramic board is used
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D16182EJ4V0DS00 (4th edition)
Date Published August 2006 NS CP(K)
Printed in Japan
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2006