HD1_15 Datasheet, PDF (4/8 Pages) Renesas Technology Corp – ON-CHIP RESISTOR NPN SILICON EPITAXIAL TRANSISTOR FOR MID-SPEED SWITCHING

HD1A3M
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Parameter
Symbol
Conditions
Collector cutoff current
DC current gain
DC current gain
DC current gain
Low level output voltage
Low level input voltage
ICBO
h ^Note
FE1
h Note
FE2
h Note
FE3
V Note
OL
V Note
IL
VCB = 60 V, IE = 0
VCE = 2.0 V, IC = 0.1 A
VCE = 2.0 V, IC = 0.5 A
VCE = 2.0 V, IC = 1.0 A
VIN = 5.0 V, IC = 0.4 A
VCE = 5.0 V, IC = 100 μA
Input resistance
R1
E-to-B resistance
R2
Note PW ≤ 350 μs, duty cycle ≤ 2 %
HD1F3P
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Parameter
Symbol
Conditions
Collector cutoff current
DC current gain
DC current gain
DC current gain
Low level output voltage
Low level input voltage
ICBO
h ^Note
FE1
h Note
FE2
h Note
FE3
V Note
OL
V Note
IL
VCB = 60 V, IE = 0
VCE = 2.0 V, IC = 0.1 A
VCE = 2.0 V, IC = 0.5 A
VCE = 2.0 V, IC = 1.0 A
VIN = 5.0 V, IC = 0.3 A
VCE = 5.0 V, IC = 100 μA
Input resistance
R1
E-to-B resistance
R2
Note PW ≤ 350 μs, duty cycle ≤ 2 %
HD1L3N
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Parameter
Symbol
Conditions
Collector cutoff current
DC current gain
DC current gain
DC current gain
Low level output voltage
Low level input voltage
ICBO
h ^Note
FE1
h Note
FE2
h Note
FE3
V Note
OL
V Note
IL
VCB = 60 V, IE = 0
VCE = 2.0 V, IC = 0.1 A
VCE = 2.0 V, IC = 0.5 A
VCE = 2.0 V, IC = 1.0 A
VIN = 5.0 V, IC = 0.2 A
VCE = 5.0 V, IC = 100 μA
Input resistance
R1
E-to-B resistance
R2
Note PW ≤ 350 μs, duty cycle ≤ 2 %
HD1 SERIES
MIN.
TYP.
MAX.
Unit
100
nA
80
−
200
−
200
−
0.35
V
0.3
V
0.7
1.0
1.3
kΩ
0.7
1.0
1.3
kΩ
MIN.
TYP.
MAX.
Unit
100
nA
200
630
−
300
780
−
200
430
−
0.12
0.3
V
0.5
0.3
V
1.54
2.2
2.86
kΩ
7
10
13
kΩ
MIN.
TYP.
MAX.
Unit
100
nA
200
−
300
−
200
−
0.2
V
0.3
V
3.29
4.7
6.11
kΩ
7
10
13
kΩ
2
Data Sheet D16182EJ4V0DS