HAT2033R_15 Datasheet, PDF (6/10 Pages) Renesas Technology Corp – Silicon N Channel Power MOS FET High Speed Power Switching

HAT2033R, HAT2033RJ
Static Drain to Source on State Resistance
vs. Temperature
0.10
Pulse Test
0.08
0.06
0.04
V_GS = 4 V
0.02
10 V
5A
I_D = 1, 2 A
1, 2, 5 A
0
–40 0
40 80 120 160
Case Temperature Tc (°C)
1000
500
Body-Drain Diode Reverse
Recovery Time
di / dt = 50 A / µs
V_GS = 0, Ta = 25°C
200
100
50
20
10
0.1 0.3 1 3 10 30 100
Reverse Drain Current I_DR (A)
Dynamic Input Characteristics
100
20
I_D = 7 A
80
60 _VDS
V_DD = 50 V
25 V
10 V
16
V_GS
12
40
8
20
V_DD = 50 V
4
25 V
10 V
0
0
0
8
16 24 32 40
Gate Charge Qg (nc)
Forward Transfer Admittance vs.
Drain Current
50
20
Tc = –25°C
10
25°C
5
75°C
2
1
V_DS = 10 V
Pulse Test
0.5
0.1 0.3 1 3 10 30 100
Drain Current I_D (A)
5000
Typical Capacitance vs.
Drain to Source Voltage
2000
1000
500
200
100
50
Ciss
Coss
Crss
20 ^VGS ^{= 0}
f = 1 MHz
10
0
10 20 30 40 50
Drain to Source Voltage V_DS (V)
1000
Switching Characteristics
300
100
tf
30
10
td(off)
tr
td(on)
3
1
0.1 0.3
V_GS = 4 V, V_DD = 30 V
PW = 3 µs, duty ≤ 1 %
1 3 10 30 100
Drain Current I_D (A)
Rev.4.00 Sep 07, 2005 page 4 of 7