HAT2033R_15 Datasheet, PDF (5/10 Pages) Renesas Technology Corp – Silicon N Channel Power MOS FET High Speed Power Switching

HAT2033R, HAT2033RJ
Main Characteristics
Power vs. Temperature Derating
4.0
Test Condition:
When using the glass epoxy board
(FR4 40 × 40 × 1.6 mm), PW ≤ 10 s
3.0
2.0
1.0
0
0
50
100
150
200
Ambient Temperature Ta (°C)
Typical Output Characteristics
50
10 V
6V
40
Pulse Test
4.5 V
30
4V
20
3.5 V
10
3V
V_GS = 2.5 V
0
0
2
4
6
8
10
Drain to Source Voltage V_DS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
0.5
Pulse Test
0.4
0.3
0.2
I_D = 5 A
0.1
2A 1A
0
0
4
8
12 16
20
Gate to Source Voltage V_GS (V)
Rev.4.00 Sep 07, 2005 page 3 of 7
Maximum Safe Operation Area
100
10 µs
30
10
3
1
0.3
0.1
OtlihmpisietearadretiboaynisRDinC_DS^O₍^p_o^e_n^r₎^{aPtWion=(1P0Wms}_≤¹⁽¹¹N^m1_0o^s0_t^sh_es^0o)₅^µt)s
Ta = 25°C
0.03 _{1 shot Pulse}
1 Drive Operation
0.01
0.1 0.3 1 3
10 30 100
Drain to Source Voltage V_DS (V)
Note 5:
When using the glass epoxy board
(FR4 40 × 40 × 1.6 mm)
Typical Transfer Characteristics
20
V_DS = 10 V
Pulse Test
16
12
8
Tc = 75°C
4
25°C
–25°C
0
0
1
2
3
4
5
Gate to Source Voltage V_GS (V)
Static Drain to Source on State Resistance
vs. Drain Current
0.5
Pulse Test
0.2
0.1
0.05
V_GS = 4 V
10 V
0.02
0.01
0.1 0.2 0.5 1 2 5 10 20 50
Drain Current I_D (A)