HAT1055R_15 Datasheet, PDF (6/12 Pages) Renesas Technology Corp – Silicon P Channel Power MOS FET High Speed Power Switching

HAT1055R, HAT1055RJ
Main Characteristics
Power vs. Temperature Derating
4.0
Test Condition:
When using the glass epoxy board
(FR4 40 × 40 × 1.6 mm) PW ≤ 10 s
3.0
2.0
1.0
1 _{Drive Operation}
0
50
100
150
200
Ambient Temperature Ta (°C)
–100
–30
–10
–3
–1
–0.3
–0.1
–0.03
–0.01
Maximum Safe Operation Area
10 _µs
100
OthpiseararetioaDnCisiOnperation^P(WPW=<¹₁^N10₀^ommt_se₎^ss₆
µ_s
limited by R_DS(on)
–0.003
Ta = 25°C
1 shot Pulse
–0.001
–0.1 –0.3 –1
–3 –10 –30 –100
Drain to Source Voltage V_DS (V)
Note 6: When using the glass epoxy board
(FR4 40 × 40 × 1.6 mm)
Typical Output Characteristics
–10
–10 V
Pulse Test
–8
–6 V
–4.5 V
–6
–3.5 V
Typical Transfer Characteristics
–10
V_DS = –10 V
Pulse Test
–8
–6
–4
–4
–2
V_GS =–2.5 V
0
–2 –4 –6 –8 –10
Drain to Source voltage V_DS (V)
–2
Tc = 75°C
25°C
–25°C
0
–1 –2 –3 –4 –5
Gate to Source Voltage V_GS (V)
Rev.1.00, Aug.29.2003, page 4 of 9