HAT1055R_15 Datasheet, PDF (4/12 Pages) Renesas Technology Corp – Silicon P Channel Power MOS FET High Speed Power Switching

HAT1055R, HAT1055RJ
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
HAT1055R
HAT1055RJ
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Avalanche current
Avalanche energy
Channel dissipation
Channel dissipation
V_DSS
V_GSS
I_D
I_D (pulse)^Note1
I_APNote4
E_ARNote4
Pch^Note2
Pch^Note3
–60
±20
–5
–40
—
—
2
3
–60
V
±20
V
–5
A
–40
A
–5
A
2.14
mJ
2
W
3
W
Channel temperature
Tch
150
150
°C
Storage temperature
Tstg
–55 to +150
–55 to +150
°C
Notes: 1. PW ≤ 10µs, duty cycle ≤ 1%
2. 1 Drive operation: When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10 s
3. 2 Drive operation: When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10 s
4. Value at Tch = 25°C, Rg ≥ 50 Ω
Rev.1.00, Aug.29.2003, page 2 of 9