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HAT1055R_15 Datasheet, PDF (5/12 Pages) Renesas Technology Corp – Silicon P Channel Power MOS FET High Speed Power Switching | |||
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HAT1055R, HAT1055RJ
Electrical Characteristics
(Ta = 25°C)
Item
Symbol Min
Drain to source breakdown
voltage
V(BR)DSS â60
Gate to Source breakdown voltage V(BR)GSS ±20
Zero gate voltage drain current IDSS
â
Zero gate voltage HAT1055R IDSS
â
drain current
HAT1055RJ IDSS
â
Gate to source leak current
IGSS
â
Gate to source cutoff voltage
VGS(off) â1.0
Forward transfer admittance
Static drain to source on state
resistance
Input capacitance
|yfs|
3
RDS(on) â
RDS(on) â
Ciss â
Output capacitance
Coss â
Reverse transfer capacitance
Crss â
Total gate charge
Qg
â
Gate to source charge
Qgs â
Gate to drain charge
Qgd â
Turn-on delay time
td(on) â
Rise time
tr
â
Turn-off delay time
td(off) â
Fall time
tf
â
Body-drain diode forward voltage VDF
â
Body-drain diode reverse recovery trr
â
time
Notes: 5. Pulse test
Typ Max Unit
â
â
V
â
â
V
â
â1
µA
â
â
µA
â
â10 µA
â
±10 µA
â
â2.5 V
5
â
S
60
76
mâ¦
90
130 mâ¦
1350 â
pF
135 â
pF
85
â
pF
21
â
nC
3
â
nC
4
â
nC
20
â
ns
15
â
ns
55
â
ns
10
â
ns
â0.85 â1.10 V
25
â
ns
Test Conditions
ID = â10 mA, VGS = 0
IG = ±100 µA, VDS = 0
VDS = â60 V, VGS = 0
VDS = â48 V, VGS = 0
Ta = 125°C
VGS = ±16 V, VDS = 0
VDS = â10 V, ID = â1 mA
ID = â2.5 ANote5, VDS = â10 V
ID = â2.5 ANote5, VGS = â10 V
ID = â2.5 ANote5, VGS = â4.5 V
VDS = â10 V, VGS = 0
f = 1 MHz
VDD = â25 V
VGS = â10 V
ID = â5 A
VGS = â10 V, ID= â2.5 A
VDD â
â30 V
RL = 12 â¦
RG = 4.7 â¦
IF = â5 A, VGS = 0Note5
IF = â5 A, VGS = 0
diF/dt = 100 A/µs
Rev.1.00, Aug.29.2003, page 3 of 9
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