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HAT1026R_15 Datasheet, PDF (6/9 Pages) Renesas Technology Corp – Silicon P Channel Power MOS FET High Speed Power Switching | |||
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HAT1026R
Static Drain to Source on State Resistance
vs. Temperature
0.10
Pulse Test
0.08
0.06
0.04
VGS = â4 V
ID = â1, â2, â5 A
0.02
â10 V
â1, â2, â5 A
0
â40 0
40 80 120 160
Case Temperature Tc (°C)
Body-Drain Diode Reverse
Recovery Time
500
200
100
50
20
10
5
â0.1 â0.2
di / dt = 20 A / µs
VGS = 0, Ta = 25°C
â0.5 â1 â2 â5 â10
Reverse Drain Current IDR (A)
Dynamic Input Characteristics
0
0
VDD = â5 V
â10 V
â10
â25 V
â4
â20
VGS
VDS
â30
VDD = â25 V
â10 V
â40
â5 V
ID = â7 A
â50
0
16 32 48 64
Gate Charge Qg (nc)
â8
â12
â16
â20
80
Forward Transfer Admittance vs.
Drain Current
50
20
Tc = â25°C
10
5
25°C
75°C
2
1
0.5
â0.2 â0.5 â1 â2
VDS = â10 V
Pulse Test
â5 â10 â20
Drain Current ID (A)
10000
Typical Capacitance vs.
Drain to Source Voltage
3000
1000
Ciss
Coss
300
Crss
100
30
VGS = 0
f = 1 MHz
10
0 â10 â20 â30 â40 â50
Drain to Source Voltage VDS (V)
1000
500
Switching Characteristics
tr
200
100
td(off)
50
tf
td(on)
20
10
â0.1 â0.2
VGS = â4 V, VDD = â10 V
PW = 3 µs, duty ⤠1 %
â0.5 â1 â2 â5 â10
Drain Current ID (A)
Rev.10.00 Sep 07, 2005 page 4 of 6
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