HAT1026R_15 Datasheet, PDF (4/9 Pages) Renesas Technology Corp – Silicon P Channel Power MOS FET High Speed Power Switching

HAT1026R
Absolute Maximum Ratings
Item
Symbol
Value
Drain to source voltage
Gate to source voltage
VDSS
–30
VGSS
±20
Drain current
Drain peak current
ID
ID (pulse) ^{Note 1}
–7
–56
Body-drain diode reverse drain current
IDR
–7
Channel dissipation
Pch ^{Note 2}
2.5
Channel temperature
Tch
150
Storage temperature
Tstg
–55 to +150
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. When using the glass epoxy board (FR4 40 × 40 × 1.6 mm), PW ≤ 10 s
(Ta = 25°C)
Unit
V
V
A
A
A
W
°C
°C
Electrical Characteristics
Item
Drain to source breakdown voltage
Gate to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body-drain diode forward voltage
Body-drain diode reverse recovery time
Note: 3. Pulse test
Symbol
V (BR) DSS
V (BR) GSS
IGSS
IDSS
VGS (off)
RDS (on)
RDS (on)
|yfs|
Ciss
Coss
Crss
td (on)
tr
td (off)
tf
VDF
trr
Min
–30
±20
—
—
–1.0
—
—
8
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
—
0.028
0.04
12
1700
1000
190
60
330
80
120
–0.9
70
Max
—
—
±10
–10
–2.5
0.037
0.065
—
—
—
—
—
—
—
—
–1.4
—
Unit
V
V
µA
µA
V
Ω
Ω
S
pF
pF
pF
ns
ns
ns
ns
V
ns
(Ta = 25°C)
Test Conditions
ID = –10 mA, VGS = 0
IG = ±100 µA, VDS = 0
VGS = ±16 V, VDS = 0
VDS = –30 V, VGS = 0
VDS = –10 V, ID = –1 mA
ID = –4 A, VGS = –10 V ^{Note 3}
ID = –4 A, VGS = –4 V ^{Note 3}
ID = –4 A, VDS = –10 V ^{Note 3}
VDS = –10 V
VGS = 0
f = 1 MHz
VGS = –4 V, ID = –4 A,
VDD ≅ –10 V
IF = –7 A, VGS = 0 ^{Note 3}
IF = –7 A, VGS = 0
diF/dt = 20 A/µs
Rev.10.00 Sep 07, 2005 page 2 of 6