HAT1026R_15 Datasheet, PDF (5/9 Pages) Renesas Technology Corp – Silicon P Channel Power MOS FET High Speed Power Switching

HAT1026R
Main Characteristics
Power vs. Temperature Derating
4.0
Test Condition:
When using the glass epoxy board
(FR4 40 × 40 × 1.6 mm), PW ≤ 10 s
3.0
2.0
1.0
0
0
50
100
150
200
Ambient Temperature Ta (°C)
Typical Output Characteristics
–50 ^{–10 V –8 V}
–6 V
–5 V
Pulse Test
–40
–4.5 V
–4 V
–30
–20
–3.5 V
–10
–3 V
V_GS = –2.5 V
0
0
–2 –4 –6 –8 –10
Drain to Source Voltage V_DS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
–0.5
Pulse Test
–0.4
–0.3
–0.2
I_D = –5 A
–0.1
–2 A
0
–1 A
0
–2 –4 –6 –8 –10
Gate to Source Voltage V_GS (V)
Rev.10.00 Sep 07, 2005 page 3 of 6
Maximum Safe Operation Area
–100
–30
–10
–3
10 µs
100 µs
PW ¹ ms
= _{10 ms}
–1
–0.3
–0.1
Operation in
this area is
limited by R_{DS (on)}
–0.03 ^{Ta = 25°C}
1 shot pulse
–0.01
–0.01 –0.03 –0.1 –0.3 –1 –3 –10 –30 –100
Drain to Source Voltage V_DS (V)
Note 4:
When using the glass epoxy board
(FR4 40 × 40 × 1.6 mm)
Typical Transfer Characteristics
–50
Tc = –25°C
–40
25°C
75°C
–30
–20
–10
0
0
V_DS = –10 V
Pulse Test
–2 –4 –6 –8 –10
Gate to Source Voltage V_GS (V)
Static Drain to Source on State Resistance
vs. Drain Current
0.5
Pulse Test
0.2
0.1
0.05
V_GS = –4 V
0.02
–10 V
0.01
0.005
–0.2 –0.5 –1 –2
–5 –10 –20
Drain Current I_D (A)