HAF2012 Datasheet, PDF (6/10 Pages) Renesas Technology Corp – Silicon N Channel MOS FET Series Power Switching

HAF2012(L), HAF2012(S)
Gate to Source Voltage vs.
Shutdown Time of Load-Short Test
10
V_DD = 36 V
8
24 V
12 V
6
9V
4
Shutdown Case Temperature vs.
Gate to Source Voltage
200
I_D = 5 A
180
160
140
2
120
0
0.1 0.2 0.5 1 2 5 10 20 50 100
Shutdown Time of Load-Short Test PW (ms)
100
0
2
4
6
8
10
Gate to Source Voltage V_GS (V)
TTL Drive Characteristics
10
1.0
I_D = 5 A
8
0.8
6
0.6
V_I
4
0.4
2
I_I
0.2
0
0
0.01 0.03 0.1 0.3 1 3 10
Gate Series Resistance R_G (kΩ)
Normalized Transient Thermal Impedance vs. Pulse Width
3
1
D=1
Tc = 25°C
0.5
0.3
0.2
0.1 _0.1
0.05
0.03
0₀^.0_.0²₁
1shot
pulse
0.01
10 µ
100 µ
θch – c (t) = γ s (t) • θch – c
θch – c = 2.50°C/W, Tc = 25°C
P_DM
D = ^PW
T
PW
T
1m
10 m
100 m
1
10
Pulse Width PW (S)
REJ03G1139-0400 Rev.4.00 Jul 13, 2007
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