HAF2012 Datasheet, PDF (4/10 Pages) Renesas Technology Corp – Silicon N Channel MOS FET Series Power Switching

HAF2012(L), HAF2012(S)
Main Characteristics
Power vs. Temperature Derating
80
60
40
20
0
0
50
100
150
200
Case Temperature Tc (°C)
Typical Output Characteristics
50
10 V
8V
40
6V
Pulse Test
5V
30
4V
20
3.5 V
10
V_GS = 3 V
0
0
2
4
6
8
10
Drain to Source Voltage V_DS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
2.0
Pulse Test
1.6
1.2
0.8
I_D = 20 A
0.4
10 A
5A
0
0
2
4
6
8
10
Gate to Source Voltage V_GS (V)
REJ03G1139-0400 Rev.4.00 Jul 13, 2007
Page 4 of 9
Maximum Safe Operation Area
500
Thermal shut down
200 Operation area
100
20 µs
50
20
10
5
2
1
Operation in
is limited by
RtDh_D^Ci_S^sO₍^ap_o^re_n^e₎^{rPaaWtion=(1T10cmm=1s0s205µ°}_{Cs )}
0.5 _{Ta = 25°C}
0.3
0.3 0.5 1 2
5 10 20 50 100
Drain to Source Voltage V_DS (V)
Typical Transfer Characteristics
50
V_DS = 10 V
Pulse Test
40
30
Tc = –25°C
25°C
75°C
20
10
0
0
1
2
3
4
5
Gate to Source Voltage V_GS (V)
Static Drain to Source on State Resistance
vs. Drain Current
0.5
Pulse Test
0.2
0.1
0.05
V_GS = 4 V
10 V
0.02
0.01
1
2 5 10 20 50 100 200
Drain Current I_D (A)