HAF2012 Datasheet, PDF (5/10 Pages) Renesas Technology Corp – Silicon N Channel MOS FET Series Power Switching

HAF2012(L), HAF2012(S)
Static Drain to Source on State Resistance
vs. Temperature
0.10
Pulse Test
0.08
0.06
I_D = 20 A
V_GS = 4 V
10 A
5A
0.04
I_D = 20 A
5 A, 10 A
0.02
10 V
0
–40 0
40 80 120 160
Case Temperature Tc (°C)
1000
500
Body-Drain Diode Reverse
Recovery Time
200
100
50
20
10
0.5 1 2
di / dt = 50 A / µs
V_GS = 0, Ta = 25°C
5 10 20 50
Reverse Drain Current I_DR (A)
Reverse Drain Current vs.
Source to Drain Voltage
50
Pulse Test
40
30
V_GS = 5 V
20
0V
10
0
0 0.4 0.8 1.2 1.6 2.0
Source to Drain Voltage V_SD (V)
Forward Transfer Admittance vs.
Drain Current
100
V_DS = 10 V
50
Pulse Test
20
Tc = –25°C
10
25°C
5
75°C
2
1
0.5 1 2
5 10 20 50
Drain Current I_D (A)
Switching Characteristics
100
50
td(off)
tf
20
tr
10
td(on)
5
2
1
0.1 0.2
V_GS = 5 V, V_DD = 30 V
PW = 300 µs, duty ≤ 1 %
0.5 1 2 5 10 20 50
Drain Current I_D (A)
10000
Typical Capacitance vs.
Drain to Source Voltage
3000
1000
300
100
Coss
30 _{VGS = 0}
f = 1 MHz
10
0
10
20
30 40 50
Drain to Source Voltage V_DS (V)
REJ03G1139-0400 Rev.4.00 Jul 13, 2007
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