HAF1009 Datasheet, PDF (6/10 Pages) Renesas Technology Corp – Silicon P Channel MOS FET Series Power Switching

HAF1009(L), HAF1009(S)
1000
500
Body to Drain Diode Reverse
recovery Time
200
100
50
20 ^{di / dt = 50 A / µs}
V_GS = 0, Ta = 25°C
10
-0.1
-0.5 -1
-5 -10
Reverse Drain Current
-50 -100
I_DR (A)
1000
500
Switching Characteristics
200 t _f
100
tr
50 _{t d(off)}
20
10
5
t _d(on)
2
V_GS = -10 V, V_DD = -30 V
PW = 300 µs, duty < 1 %
1
-0.1 -0.2 -0.5 -1 -2 -5 -10 -20
Drain Current I_D (A)
-50 -100
Reverse Drain Current vs.
Source to Drain Voltage
-50
Pulse Test
-40
10000
Typical capacitance vs.
Drain to Source Voltage
VGS = 0
f = 1 MHz
-30
-10 V
-20
-5 V
-10
V_GS = 0 V
0
-0.4 -0.8 -1.2 -1.6 -2.0
Source to Drain Voltage V_SD (V)
1000
100
0 -10 -20 -30 -40 -50 -60
Drain to Source Voltage V_DS (V)
Rev.1.00, May.13.2003, page 6 of 10