HAF1009 Datasheet, PDF (4/10 Pages) Renesas Technology Corp – Silicon P Channel MOS FET Series Power Switching

HAF1009(L), HAF1009(S)
Main Characteristics
Power vs. Temperature Derating
80
60
40
20
0
50
100
150
200
Case Temperature Tc (°C)
-500
-200
Maximum Safe Operation Area
Thermal shut down
operation area
-100
-50
-20
100 _µs
-10
-5
-2
-1
Operation
in this area
is limited by
DC
Operation^P₍W_Tc
=
=
R_DS(on)
1 _ms
10 _ms
25_°C)
-0.5 _{Ta = 25°C}
-0.3
-0.5 -1 -2
-5 -10 -20 -50 -100
Drain to Source Voltage V_DS (V)
Typical Output Characteristics
-50
-10 V
-4 V
-40
-8 V
-6 V
-30
-5 V
V_GS = -3.5 V
-20
-10
Pulse Test
0
-2
-4
-6
-8 -10
Drain to Source Voltage V_DS (V)
Typical Transfer Characteristics
-50
V _DS = -10 V
Tc = -25°C
-40
Pulse Test
25°C
-30
75°C
-20
-10 75°C
25°C
Tc = -25°C
0
-2
-4 -6
-8 -10
Gate to Source Voltage V_GS (V)
Rev.1.00, May.13.2003, page 4 of 10