HAF1009 Datasheet, PDF (2/10 Pages) Renesas Technology Corp – Silicon P Channel MOS FET Series Power Switching

HAF1009(L), HAF1009(S)
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Drain to source voltage
Gate to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain
current
Channel dissipation
V_DSS
V_GSS
V_GSS
I_D
I_D (pulse) ^Note1
I_DR
Pch^Note2
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. PW ≤ 10µs, duty cycle ≤ 1 %
2. Value at Tc = 25°C
Ratings
Unit
–60
V
–16
V
2.5
V
–40
A
–80
A
–40
A
50
W
150
°C
–55 to +150
°C
Typical Operation Characteristics
(Ta = 25°C)
Item
Input voltage
Input current
(Gate non shut down)
Input current
(Gate shut down)
Shut down temperature
Gate operation voltage
Symbol Min
V_IH
V_IL
I_IH1
I_IH2
I_IL
I_IH(sd)1
I_IH(sd)2
Tsd
–3.5
—
—
—
—
—
—
—
Vop
–3.5
Typ Max Unit
—
—
V
—
–1.2 V
—
–100 µA
—
–50 µA
—
–1
µA
–0.8 —
mA
–0.35 —
mA
175 —
°C
—
–12 V
Test Conditions
Vi = –8 V, V_DS = 0
Vi = –3.5 V, V_DS = 0
Vi = –1.2 V, V_DS = 0
Vi = –8 V, V_DS = 0
Vi = –3.5 V, V_DS = 0
Channel temperature
Rev.1.00, May.13.2003, page 2 of 10