BB502M Datasheet, PDF (6/11 Pages) Hitachi Semiconductor – Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier

BB502M
Forward Transfer Admittance
vs. Gate1 Voltage
30
V_DS = 5 V
R_G = 180 kΩ
24 _{f = 1 kHz}
18
4V
3V
2V
12
6
V_G2S = 1 V
0
1
2
3
4
5
Gate1 Voltage V_G1 (V)
Power Gain vs. Gate Resistance
30
25
20
15
10 _{VDS = VG1 = 5 V}
V_G2S = 4 V
5 _{f = 900 MHz}
0
100
200
500
Gate Resistance R_G (kΩ)
1000
Power Gain vs. Drain Current
30
25
20
15
10 ^{VDS = VG1 = 5 V}
V_G2S = 4 V
5
R_G = variable
f = 900 MHz
0
0
5
10
15
20
Drain Current I_D (mA)
Rev.5.00 Aug 10, 2005 page 6 of 10
Forward Transfer Admittance
vs. Gate1 Voltage
30
V_DS = 5 V
24
R_G = 270 kΩ
f = 1 kHz
18
4V
3V
12
6
V_G2S = 1 V
0
1
2
3
4
5
Gate1 Voltage V_G1 (V)
Noise Figure vs. Gate Resistance
4
V_DS = V_G1 = 5 V
V_G2S = 4 V
3 ^{f = 900 MHz}
2
1
0
100
200
500
1000
Gate Resistance R_G (kΩ)
Noise Figure vs. Drain Current
4
V_DS = V_G1 = 5 V
V_G2S = 4 V
3 ^RG ^{= variable}
f = 900 MHz
2
1
0
0
5
10
15
20
Drain Current I_D (mA)