BB502M Datasheet, PDF (4/11 Pages) Hitachi Semiconductor – Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier

BB502M
900MHz Power Gain, Noise Figure Test Circuit
V_G1 V_G2
V_D
C4
C5
C6
Input (50Ω)
R1
R2
C3
G2
G1
L1 L2
R3
RFC
D
L3 L4
S
Output (50Ω)
C1
C2
C1, C2 :
C3 :
C4 to C6 :
R1 :
R2 :
R3 :
Variable Capacitor (10pF MAX)
Disk Capacitor (1000pF)
Air Capacitor (1000pF)
180 kΩ
47 kΩ
4.7 kΩ
L1:
10
21
L3:
29
L2:
26
L4:
18
(φ1mm Copper wire)
Unit: mm
RFC: φ1mm Copper wire with enamel 4turns inside dia 6mm
Rev.5.00 Aug 10, 2005 page 4 of 10