BB502M Datasheet, PDF (5/11 Pages) Hitachi Semiconductor – Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier

BB502M
Maximum Channel Power
Dissipation Curve
200
150
100
50
0
50
100
150
200
Ambient Temperature Ta (°C)
Drain Current vs. Gate1 Voltage
20
V_DS = 5 V
R_G = 120 kΩ
16
4V
12
3V
2V
8
4
V_G2S = 1 V
0
1
2
3
4
5
Gate1 Voltage V_G1 (V)
Drain Current vs. Gate1 Voltage
20
V_DS = 5 V
R_G = 270 kΩ
16
12
8
3V ^4V
4
2V
V_G2S = 1 V
0
1
2
3
4
5
Gate1 Voltage V_G1 (V)
Rev.5.00 Aug 10, 2005 page 5 of 10
Typical Output Characteristics
20
V_G2S = 4 V
16 ^{VG1 = VDS}
12
8
180
220
270
k^Ω
k^Ω
k^Ω
4
330 ^kΩ
0
1
2
3
4
5
Drain to Source Voltage V_DS (V)
Drain Current vs. Gate1 Voltage
20
V_DS = 5 V
16 ^{RG = 180 kΩ}
12
4V
3V
8
2V
4
V_G2S = 1 V
0
1
2
3
4
5
Gate1 Voltage V_G1 (V)
Forward Transfer Admittance
vs. Gate1 Voltage
30
V_DS = 5 V
24 ^{RG = 120 kΩ}
f = 1 kHz
4V
3V
18
2V
12
6
V_G2S = 1 V
0
1
2
3
4
5
Gate1 Voltage V_G1 (V)