2SJ673_15 Datasheet, PDF (6/10 Pages) Renesas Technology Corp – SWITCHING P-CHANNEL POWER MOS FET

FORWARD TRANSFER CHARACTERISTICS
-1000
-100
-10
TA = −55°C
25°C
75°C
125°C
-1
-0.1
0
VDS = −10 V
Pulsed
-1
-2
-3
-4
-5
VGS - Gate to Source Voltage - V
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
1000
100
VDS = −10 V
Pulsed
10
1
0.1
0.01
0.001
TA = −55°C
25°C
75°C
125°C
0.0001
-0.001 -0.01 -0.1
-1
-10
ID - Drain Current - A
-100
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
100
90
80
70
60
50
40
30
20
10
0
-0.1
Pulsed
VGS = −4.0 V
−4.5 V
−10 V
-1
-10
-100
-1000
ID - Drain Current - A
2SJ673
-250
-200
-150
-100
-50
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
Pulsed
VGS = −10 V
−4 V
−4.5 V
0
0
-1
-2
-3
-4
-5
VDS - Drain to Source Voltage - V
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
30
Pulsed
28
26
24
22
ID = −28.8 A
20
−18 A
−7.2 A
18
16
14
12
0 -2 -4 -6 -8 -10 -12 -14 -16 -18 -20
VGS - Gate to Source Voltage - V
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
-4
VDS = −10 V
ID = −1 mA
-3
-2
-1
0
-50
0
50
100
150
Tch - Channel Temperature - °C
4
Data Sheet D17210EJ1V0DS