2SJ673_15 Datasheet, PDF (3/10 Pages) Renesas Technology Corp – SWITCHING P-CHANNEL POWER MOS FET

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SJ673
SWITCHING
P-CHANNEL POWER MOS FET
DESCRIPTION
The 2SJ673 is P-channel MOS Field Effect Transistor
designed for high current switching applications.
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SJ673
Isolated TO-220 (MP-45F)
FEATURES
• Super low on-state resistance
RDS(on)1 = 20 mΩ MAX. (VGS = −10 V, ID = −18 A)
RDS(on)2 = 31 mΩ MAX. (VGS = −4.0 V, ID = −18 A)
• Low C iss: C iss = 4600 pF TYP.
• Built-in gate protection diode
(Isolated TO-220)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
−60
V
Gate to Source Voltage (VDS = 0 V)
VGSS
m20
V
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) ^Note1
ID(DC)
m36
A
ID(pulse)
m144
A
Total Power Dissipation (TC = 25°C)
PT1
32
W
Total Power Dissipation (TA = 25°C)
PT2
2.0
W
Channel Temperature
Tch
150
°C
Storage Temperature
Single Avalanche Current ^Note2
Single Avalanche Energy ^Note2
Tstg
−55 to +150
°C
IAS
−36
A
EAS
130
mJ
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%
2. Starting Tch = 25°C, VDD = −30 V, RG = 25 Ω, VGS = 20 → 0 V
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D17210EJ1V0DS00 (1st edition)
Date Published June 2004 NS CP(K)
Printed in Japan
2004