2SD2106 Datasheet, PDF (6/7 Pages) Hitachi Semiconductor – Silicon NPN Epitaxial

2SD2106
10
3
1.0
0.3
0.1
1m
Saturation Voltage vs. Collector Current
10
5
200
2
V_{BE (sat)}
500
1
0.5
V_{CE (sat)}
l_C/l_B = 200
0.2
T_C = 25°C
Pulse
0.1 0.2 0.5 1.0 2
5 10
Collector current I_C (A)
Transient Thermal Resistance
TC = 25°C
10m
100m
1.0
10
Time t (s)
100
1000