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2SD2106 Datasheet, PDF (4/7 Pages) Hitachi Semiconductor – Silicon NPN Epitaxial
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2SD2106
Absolute Maximum Ratings (Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector peak current
Collector power dissipation
Junction temperature
Storage temperature
Note: 1. Value at TC = 25°C.
Symbol
VCBO
VCEO
VEBO
IC
I C(peak)
PC
PC * 1
Tj
Tstg
Rating
Unit
120
V
120
V
7
V
6
A
10
A
2
W
25
150
°C
–55 to +150
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min Typ
Collector to base breakdown V(BR)CBO 120 —
voltage
Collector to emitter breakdown V(BR)CEO 120 —
voltage
Emitter to base breakdown
V(BR)EBO
7
—
voltage
Collector cutoff current
DC current transfer ratio
Collector to emitter saturation
voltage
Base to emitter saturation
voltage
Note: 1. Pulse test.
I CBO
I CEO
hFE
VCE(sat)1
VCE(sat)2
VBE(sat)1
VBE(sat)2
—
—
—
—
1000 —
—
—
—
—
—
—
—
—
Max Unit
—
V
—
V
—
V
10
µA
10
20000
1.5 V
3.0
2.0 V
3.5
Test conditions
IC = 0.1 mA, IE = 0
IC = 25 mA, RBE = ∞
IE = 50 mA, IC = 0
VCB = 100 V, IE = 0
VCE = 100 V, RBE = ∞
VCE = 3 V, IC = 3 A*1
IC = 3 A, IB = 6 mA*1
IC = 6 A, IB = 60 mA*1
IC = 3 A, IB = 6 mA*1
IC = 6 A, IB = 60 mA*1
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