2SD2106 Datasheet, PDF (5/7 Pages) Hitachi Semiconductor – Silicon NPN Epitaxial

Maximum Collector Dissipation Curve
30
20
10
0
50
100
150
Case Temperature T_C (°C)
Typical Output Characteristics
10
T_C = 25°C
8
5.0
4.5
4.0
3.5 3.0
6
2.5
2.0
1.5
4
1.0 mA
2
I_B = 0
0
1
2
3
4
5
Collector to emitter voltage V_CE (V)
2SD2106
Area of Safe Operation
30
i_{C (peak)}
10
I_{C (max)}
3
1.0
0.3 Ta = 25°C
1 shot pulse
0.1
0.03
0.3 1.0 3
10 30 100 300
Collector to emitter voltage V_CE (V)
10,000
5,000
2,000
1,000
DC Current Transfer Ratio
vs. Collector Current
V_CE = 3 V
Pulse
T ^{C= 75°C25°C}
–25^°C
500
200
100
0.1 0.2
0.5 1.0 2
5 10
Collector current I_C (A)