2SC4228_15 Datasheet, PDF (6/9 Pages) Renesas Technology Corp – NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN SUPER MINIMOLD

2SC4228
INSERTION POWER GAIN
vs. FREQUENCY
25
VCE = 3 V
IC = 5 mA
20
15
INSERTION POWER GAIN
vs. COLLECTOR CURRENT
12
VCE = 3 V
f = 2 GHz
8
10
4
5
0
0.1 0.2
0.5
1
2
5
Frequency f (GHz)
NOISE FIGURE vs.
COLLECTOR CURRENT
5
VCE = 3 V
f = 2 GHz
4
0
0.5 1
5 10
50
Collector Current IC (mA)
3
2
1
0
0.5 1
5 10
50
Collector Current IC (mA)
Remark The graphs indicate nominal characteristics.
S-PARAMETERS
S-parameters/Noise parameters are provided on the NEC Compound Semiconductor Devices Web site in a form
(S2P) that enables direct import to a microwave circuit simulator without keyboard input.
Click here to download S-parameters.
[RF and Microwave] → [Device Parameters]
URL http://www.ncsd.necel.com/
4
Data Sheet PU10452EJ01V0DS