2SC4228_15 Datasheet, PDF (4/9 Pages) Renesas Technology Corp – NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN SUPER MINIMOLD

ELECTRICAL CHARACTERISTICS (TA = +25°C)
Parameter
DC Characteristics
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
RF Characteristics
Gain Bandwidth Product
Insertion Power Gain
Noise Figure
Reverse Transfer Capacitance
Symbol
Test Conditions
ICBO VCB = 10 V, IE = 0 mA
IEBO VEB = 1 V, IC = 0 mA
h Note 1
FE
VCE = 3 V, IC = 5 mA
fT
VCE = 3 V, IC = 5 mA, f = 2 GHz
S21e² VCE = 3 V, IC = 5 mA, f = 2 GHz
NF VCE = 3 V, IC = 5 mA, f = 2 GHz
C Note 2
re
VCB = 3 V, IE = 0 mA, f = 1 MHz
Notes 1. Pulse measurement: PW ≤ 350 µs, Duty Cycle ≤ 2%
2. Collector to base capacitance when the emitter grounded
hFE CLASSIFICATION
Rank
Marking
hFE Value
R43
R43
50 to 100
R44
R44
80 to 160
R45
R45
125 to 250
2SC4228
MIN. TYP. MAX. Unit
−
−
1.0
µA
−
−
1.0
µA
50
100
250
−
5.5
8.0
–
GHz
5.5
7.5
−
dB
−
1.9
3.2
dB
−
0.3
0.7
pF
2
Data Sheet PU10452EJ01V0DS