2SC4228_15 Datasheet, PDF (3/9 Pages) Renesas Technology Corp – NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN SUPER MINIMOLD

DATA SHEET
NPN SILICON RF TRANSISTOR
2SC4228
NPN EPITAXIAL SILICON RF TRANSISTOR
FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION
3-PIN SUPER MINIMOLD
DESCRIPTION
The 2SC4228 is a low supply voltage transistor designed for VHF, UHF low noise amplifier.
It is suitable for a high density surface mount assembly since the transistor has been applied 3-pin super minimold
package.
FEATURES
• Low noise : NF = 1.9 dB TYP. @ VCE = 3 V, IC = 5 mA, f = 2 GHz
• High gain : S21e² = 7.5 dB TYP. @ VCE = 3 V, IC = 5 mA, f = 2 GHz
• 3-pin super minimold package
ORDERING INFORMATION
Part Number
2SC4228
2SC4228-T1
Quantity
50 pcs (Non reel)
3 kpcs/reel
Supplying Form
• 8 mm wide embossed taping
• Pin 3 (Collector) face the perforation side of the tape
Remark To order evaluation samples, contact your nearby sales office.
The unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS (TA = +25°C)
Parameter
Symbol
Ratings
Unit
Collector to Base Voltage
VCBO
20
V
Collector to Emitter Voltage
VCEO
10
V
Emitter to Base Voltage
VEBO
1.5
V
Collector Current
Total Power Dissipation
IC
P ^Note
tot
35
150
mA
mW
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
−65 to +150
°C
Note Free air
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
Document No. PU10452EJ01V0DS (1st edition)
(Previous No. P10372EJ2V0DS00)
Date Published December 2003 CP(K)
Printed in Japan
The mark  shows major revised points.
 NEC Compound Semiconductor Devices 1993, 2003