2SC4095_15 Datasheet, PDF (6/10 Pages) Renesas Technology Corp – MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD

S-PARAMETER
S11e, S22e-FREQUENCY CONDITION VCE = 6 V, IC = 10/3 mA, freq. = 0.2 to 2 GHz (Step 200 MHz)
0.09
0.007.413300.008.42
0.41
120
0.10
0.40
110
0.11
0.39
100
0.12 0.13
0.38 0.37
90
0.2
0.14
0.36
80
0.15
0.35
70
0.16
0.34
060
0.303.17 _500.302.18
ONENT
0.4
0.6
3.0
0.8
1.0
4.0
6.0
0.1
0.2
0.3
0.4
2 GHz
REACTANCE COMPONENT
S11e
I = 10 mA ( ) ––R––
ZO
0.2
C
0.4
0.6 _{2 GHz}
0.8
IC = 3 mA
S22e
IC = 10 mA
10
20
50
0.2 GHz
IC = 3 mA
0.2 GHz
2SC4095
S21e-FREQUENCY
CONDITION VCE = 6 V
IC = 10/3 mA
freq. = 0.2 to 2 GHz (Step 200 MHz)
90°
120°
60°
IC = 10 mA
150° ^{0.2 GHz}
S21e
30°
150°
180°
IC = 3 mA
2GHz
04 8
12 16 20 ^{0° 180°}
S12e-FREQUENCY
CONDITION VCE = 6 V
IC = 10/3 mA
freq. = 0.2 to 2 GHz (Step 200 MHz)
90°
120°
60°
IC = 10 mA
2GHz
30°
S12e
0.2 GHz
0
IC = 3 mA
0.04 0.08 0.12 0.16 0.2 ^0°
−150°
−120°
−90°
−30°
−150°
−60°
−120°
−90°
−30°
−60°
4