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2SC4095_15 Datasheet, PDF (5/10 Pages) Renesas Technology Corp – MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD | |||
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NOISE FIGURE vs.
COLLECTOR CURRENT
7
VCE = 10 V
f = 2.0 GHz
6
5
4
3
2
1
0
0.5 1
5 10
IC-Collector Current-mA
50 70
S-PARAMETER
VCE = 6.0 V, IC = 3.0 mA, ZO = 50
f (MHz)
200
400
600
800
1000
1200
1400
1600
1800
2000
S11
0.870
0.747
0.628
0.516
0.400
0.327
0.262
0.231
0.205
0.196
S11
24.2
44.6
59.8
75.1
87.7
103.4
118.7
135.5
155.3
170.6
S21
9.193
7.780
7.058
5.675
5.180
4.269
3.950
3.406
3.290
2.867
VCE 6.0 V, IC = 10.0 mA, ZO = 50
f (MHz)
200
400
600
800
1000
1200
1400
1600
1800
2000
S11
0.671
0.458
0.319
.0239
0.172
0.149
0.131
0.132
0.150
0.163
S11
43.5
68.7
83.7
101.9
119.3
141.4
163.0
179.6
160.0
150.1
S21
18.685
12.702
9.895
7.275
6.261
5.038
4.597
3.927
3.743
3.233
S21
155.6
136.6
122.1
109.4
99.6
89.8
81.7
74.0
66.4
60.8
S21
137.9
115.2
102.8
92.3
85.1
77.4
71.0
64.8
58.8
54.5
S12
0.031
0.040
0.064
0.066
0.090
0.084
0.106
0.105
0.126
0.124
S12
0.023
0.029
0.046
0.049
0.067
0.070
0.088
0.094
0.113
0.115
S12
53.6
66.2
54.7
56.0
49.4
47.9
48.5
42.1
46.4
40.9
S12
52.1
62.2
54.4
63.1
58.6
57.9
56.1
54.0
55.3
50.0
2SC4095
S22
0.946
0.876
0.816
0.743
0.689
0.654
0.604
0.581
0.548
0.529
S22
12.8
20.7
26.4
30.9
33.0
35.7
37.7
41.5
43.9
47.1
S22
0.832
0.710
0.649
0.600
0.578
0.559
0.527
0.514
0.494
0.478
S22
19.0
23.9
26.0
27.5
28.4
30.3
32.5
35.7
38.1
41.6
3
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