English
Language : 

RJK0210DPA_10 Datasheet, PDF (5/7 Pages) Renesas Technology Corp – Silicon N Channel Power MOS FET Power Switching
RJK0210DPA
3
Normalized Transient Thermal Impedance vs. Pulse Width
Preliminary
Vin
15 V
1
D=1
0.5
0.3
0.2
0.1 0.1
0.05
0.03
0.02
0.011shot
pulse
0.01
PDM
D = PW
T
PW
T
1m
10 m
100 m
1
10
Pulse Width PW (s)
Avalanche Test Circuit
VDS
Monitor
Rg
L
IAP
Monitor
D. U. T
VDD
Avalanche Waveform
EAR =
1
2
L • IAP2 •
VDSS
VDSS – VDD
IAP
ID
V(BR)DSS
VDS
VDD
0
Switching Time Test Circuit
Vin Monitor
Rg
D.U.T.
Vout
Monitor
RL
Vin
10 V
VDS
= 10 V
Switching Time Waveform
90%
Vin
Vout
10%
10%
10%
90%
90%
td(on)
tr
td(off)
tf
R07DS0217EJ0200 Rev.2.00
Dec 07, 2010
Page 5 of 6