RJK0210DPA_10 Datasheet, PDF (3/7 Pages) Renesas Technology Corp – Silicon N Channel Power MOS FET Power Switching

RJK0210DPA
Main Characteristics
Power vs. Temperature Derating
80
60
40
20
0
50
100
150
200
Case Temperature Tc (°C)
Typical Output Characteristics
100
4.5 V
10 V
80
Pulse Test
3.4 V
3.2 V
60
3.0 V
40
20
V_GS = 2.8 V
0
2
4
6
8
10
Drain to Source Voltage V_DS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
240
Pulse Test
180
120
I_D = 20 A
60
10 A
5A
0
4
8
12
16
Gate to Source Voltage V_GS (V)
R07DS0217EJ0200 Rev.2.00
Dec 07, 2010
Preliminary
Maximum Safe Operation Area
1000
100
1 _ms
10
PW = 10 ms
Operation in
1 ^{this area is}
limited by R_DS(on)
Tc = 25 °C
0.1 ^{1 shot Pulse}
0.1
1
10
100
Drain to Source Voltage V_DS (V)
Typical Transfer Characteristics
100
V_DS = 5 V
Pulse Test
80
60
40
20
Tc = 75°C
25°C
–25°C
0
1
2
3
4
5
Gate to Source Voltage V_GS (V)
Static Drain to Source On State Resistance
vs. Drain Current
100
Pulse Test
30
10
V_GS = 4.5 V
10 V
3
1
1 3 10 30 100 300 1000
Drain Current I_D (A)
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