RJK0208DPA Datasheet, PDF (5/7 Pages) Renesas Technology Corp – Silicon N Channel Power MOS FET with Schottky Barrier Diode Power Switching

RJK0208DPA
3
Normalized Transient Thermal Impedance vs. Pulse Width
Preliminary
Vin
15 V
1
D=1
0.5
0.3
0.2
0.1 _0.1
0.05
0.03
0.02
0.011shot
pulse
0.01
10 μ
100 μ
θch − c(t) = γs (t) • θch − c
θch − c = 2.08°C/W, Tc = 25°C
P_DM
D=
PW
T
PW
T
1m
10 m
100 m
1
10
Pulse Width PW (S)
Avalanche Test Circuit
V_DS
Monitor
Rg
L
I_AP
Monitor
D. U. T
V_DD
Avalanche Waveform
E_AR =
1
2
L • I_AP2 •
V_DSS
V_DSS – V_DD
I_AP
I_D
V_(BR)DSS
V_DS
V_DD
0
Switching Time Test Circuit
Vin Monitor
Rg
D.U.T.
Vout
Monitor
R_L
Vin
10 V
V_DS
= 10 V
Switching Time Waveform
90%
Vin
Vout
10%
10%
10%
90%
90%
td(on)
tr
td(off)
tf
REJ03G1924-0200 Rev.2.00
Apr 27, 2010
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