RJK0208DPA Datasheet, PDF (3/7 Pages) Renesas Technology Corp – Silicon N Channel Power MOS FET with Schottky Barrier Diode Power Switching

RJK0208DPA
Main Characteristics
Power vs. Temperature Derating
80
60
40
20
0
50
100
150
200
Case Temperature Tc (°C)
Typical Output Characteristics
100
4.5 V _{3.1 V} ^{Pulse Test}
10 V
80
2.9 V
60
2.7 V
40
20
V_GS = 2.5 V
0
2
4
6
8
10
Drain to Source Voltage V_DS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
160
Pulse Test
120
80
40
I_D = 20 A
10 A
5A
0
4
8
12 16 20
Gate to Source Voltage V_GS (V)
REJ03G1924-0200 Rev.2.00
Apr 27, 2010
Preliminary
1000
100
10
Maximum Safe Operation Area
PW = 10 ms
1
100
ms
10
μ_s
μ_s
Operation in
1 ^{this area is}
limited by R_DS(on)
Tc = 25 °C
0.1 ^{1 shot Pulse}
0.1
1
10
100
Drain to Source Voltage V_DS (V)
Typical Transfer Characteristics
100
V_DS = 5 V
Pulse Test
80
60
40
20
Tc = 75°C
25°C
–25°C
0
1
2
3
4
5
Gate to Source Voltage V_GS (V)
Static Drain to Source On State Resistance
vs. Drain Current
100
Pulse Test
30
10
3 _{VGS = 4.5 V}
1
10 V
1 3 10 30 100 300 1000
Drain Current I_D (A)
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