RJK0208DPA Datasheet, PDF (2/7 Pages) Renesas Technology Corp – Silicon N Channel Power MOS FET with Schottky Barrier Diode Power Switching

RJK0208DPA
Electrical Characteristics
Item
Symbol Min
Drain to source breakdown voltage V_(BR)DSS
25
Gate to source leak current
I_GSS
—
Zero gate voltage drain current
I_DSS
—
Gate to source cutoff voltage
V_GS(off)
1.2
Static drain to source on state
R_DS(on)
—
resistance
R_DS(on)
—
Forward transfer admittance
|y_fs|
—
Input capacitance
Ciss
—
Output capacitance
Coss
—
Reverse transfer capacitance
Crss
—
Gate Resistance
Rg
—
Total gate charge
Qg
—
Gate to source charge
Qgs
—
Gate to drain charge
Qgd
—
Turn-on delay time
t_d(on)
—
Rise time
t_r
—
Turn-off delay time
t_d(off)
—
Fall time
t_f
—
Body–drain diode forward voltage
V_DF
—
Body–drain diode reverse recovery
t_rr
—
time
Notes: 4. Pulse test
Typ
—
—
—
—
1.6
2.1
125
5350
1290
530
1.6
36.0
15.3
10.0
21
8
80
17
0.39
45
Max
—
± 0.5
1
2.5
2.0
2.7
—
7490
—
—
3.2
—
—
—
—
—
—
—
—
—
Preliminary
Unit
V
A
mA
V
m
m
S
pF
pF
pF

nC
nC
nC
ns
ns
ns
ns
V
ns
(Ta = 25°C)
Test Conditions
I_D = 10 mA, V_GS = 0
V_GS = ±20 V, V_DS = 0
V_DS = 25 V, V_GS = 0
V_DS = 10 V, I _D = 1 mA
I_D = 32.5A, V_GS = 10 V ^Note4
I_D = 32.5A, V_GS = 4.5 V ^Note4
I_D = 32.5A, V_DS = 5 V ^Note4
V_DS = 10 V
V_GS = 0
f = 1 MHz
V_DD = 10 V
V_GS = 4.5 V
I_D = 65 A
V_GS = 10 V, I_D = 32.5 A
V_DD  10 V
R_L = 0.31
Rg = 4.7 
I_F = 2 A, V_GS = 0 ^Note4
I_F =65 A, V_GS = 0
di_F/ dt = 100 A/ s
REJ03G1924-0200 Rev.2.00
Apr 27, 2010
Page 2 of 6