RJK0202DSP Datasheet, PDF (5/7 Pages) Renesas Technology Corp – Silicon N Channel Power MOS FET Power Switching

RJK0202DSP
Preliminary
Normalized Transient Thermal Impedance vs. Pulse Width
10
1
0.1
0.01
0.001
D=1
0.5
0.2
0.1
0.05
0.02
0.01
1shot ^pulse
0.0001
1μ
10 μ
1 m 10 m 100 m
θch - f(t) = γs (t) x θch - f
θch - f = 100°C/ W, Ta = 25°C
When using the glass epoxy board
(FR4 40 x 40 x 1.6 mm)
PDM
PW
T
D=
PW
T
1
10 100 1000 10000
Pulse Width PW (s)
Avalanche Test Circuit
V DS
Monitor
Rg
L
I AP
Monitor
D. U. T
VDD
Vin
50 Ω
Avalanche Waveform
E_AR =
1
2
L • I_AP² •
V_DSS
V_DSS - V _DD
I _AP
I_D
V_(BR)DSS
V_DS
VDD
0
Switching Time Test Circuit
Vin Monitor
Rg
D.U.T.
Vout
Monitor
R_L
Vin
VDS
= 10 V
Switching Time Waveform
Vin ^10%
Vout 10%
90%
td(on)
tr
90%
10%
90%
td(off)
tf
R07DS0238EJ0220 Rev.2.20
Jan 05, 2011
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