RJH60F5DPK_10 Datasheet, PDF (5/7 Pages) Renesas Technology Corp – Silicon N Channel IGBT High Speed Power Switching

RJH60F5DPK
Normalized Transient Thermal Impedance vs. Pulse Width (IGBT)
10
Tc = 25°C
Preliminary
1 ^D=1
0.5
0.2
0.1
0.05
0.1
0.02 0.01 ^{1 shot pulse}
0.01
10 μ
100 μ
1m
θ_j – c(t) = γs (t) • θ_j – c
θ_j – c = 0.48 °C/W, Tc = 25°C
P_DM
D=
PW
T
PW
T
10 m
100 m
1
10
Pulse Width PW (s)
Normalized Transient Thermal Impedance vs. Pulse Width (Diode)
10
Tc = 25°C
D=1
1
0.5
0.2
0.1
0.1 0.05
0.02
0.01
1 shot pulse
0.01
10 μ
100 μ
θ_j – c(t) = γs (t) • θ_j – c
θ_j – c = 2°C/W, Tc = 25°C
P_DM
D=
PW
T
PW
T
1m
10 m
100 m
1
10
Pulse Width PW (s)
Switching Time Test Circuit
Ic Monitor
R_L
Vin Monitor
Rg
D.U.T.
V_CC
Vin = 15 V
Waveform
90%
Vin
10%
90%
90%
Ic
td(on)
10%
tr
td(off)
ton
toff
10%
tf
R07DS0055EJ0200 Rev.2.00
Jul 23, 2010
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