RJH60F5DPK_10 Datasheet, PDF (3/7 Pages) Renesas Technology Corp – Silicon N Channel IGBT High Speed Power Switching

RJH60F5DPK
Main Characteristics
Maximum Safe Operation Area
1000
100
PW
= _{10 μs}
10
1
Tc = 25°C
Single pulse
0.1
1
10
100
1000
Collector to Emitter Voltage V_CE (V)
Typical Transfer Characteristics
160
PVu_Cl_Ese=T1e0stV
TPau=lse25T°_eCst
120
80
Tc = 75°C
40
25°C
–25°C
0
2
4
6
8
10
12
Gate to Emitter Voltage V_GE (V)
Collector to Emitter Saturation Voltage
vs. Junction Temparature (Typical)
2.2
V_GE = 15 V
2.0 ^{Pulse Test}
I_C = 80 A
1.8
1.6
40 A
1.4
20 A
1.2
1.0
−25 0 25 50 75 100 125 150
Junction Temparature Tj (°C)
R07DS0055EJ0200 Rev.2.00
Jul 23, 2010
Preliminary
Typical Output Characteristics
160
Pulse Test
Ta = 25°C
120
11 V
13 V
15 V
80
10.5 V
10 V
9.5 V
9V
40
8.5 V
V_GE = 8 V
0
0
1
2
3
4
5
Collector to Emitter Voltage V_CE (V)
Collector to Emitter Saturation Voltage
vs. Gate to Emitter Voltage (Typical)
3.0
Ta = 25°C
Pulse Test
2.6
I_C = 20 A
40 A
2.2
80 A
1.8
1.4
1.0
6 8 10 12 14 16 18 20
Gate to Emitter Voltage V_GE (V)
Gate to Emitter Cutoff Voltage
vs. Junction Temparature (Typical)
8
V_CE = 10 V
Pulse Test
7
I_C = 10 mA
6
5
1 mA
4
−25 0 25 50 75 100 125 150
Junction Temparature Tj (°C)
Page 3 of 6