RJH60F5DPK_10 Datasheet, PDF (4/7 Pages) Renesas Technology Corp – Silicon N Channel IGBT High Speed Power Switching

RJH60F5DPK
Forward Current vs. Forward Voltage (Typical)
100
V_GE = 0 V
Ta = 25°C
80 Pulse Test
60
40
20
0
0
1
2
3
4
5
C-E Diode Forward Voltage V_CEF (V)
Dynamic Input Characteristics (Typical)
800
16
V_GE
V_CE
600
400
12
V_CC = 300 V
600 V
8
200
0
0
V_CC = 600 V
4
300 V
I_C = 40 A
Ta = 25°C
0
20 40 60 80 100
Gate Charge Qg (nc)
Switching Characteristics (Typical) (2)
1000
I_C = 40 A, R_L = 10 Ω
V_GE = 15 V, Ta = 25°C
td(off)
tf
100
td(on)
tr
10
1
10
100
Gate Resistance Rg (Ω)
Preliminary
Typical Capacitance vs.
Collector to Emitter Voltage (Typical)
10000
V_GE = 0 V
f = 1 MHz
Cies
1000
100
Coes
Ta = 25°C
10
Cres
0 50 100 150 200 250 300
Collector to Emitter Voltage V_CE (V)
Switching Characteristics (Typical) (1)
1000
V_CC = 300 V, V_GE = 15 V
Rg = 5 Ω, Ta = 25°C
tf
100
td(off)
td(on)
10
tr
1
1
10
100
1000
Collector Current I_C (A)
Switching Characteristics (Typical) (3)
1000
I_C = 40 A, V_GE = 15 V
R_L = 10 Ω, Rg = 5 Ω
tf
100
td(on)
td(off)
tr
10
0 20 40 60 80 100 120 140
Case Temperature Tc (°C)
R07DS0055EJ0200 Rev.2.00
Jul 23, 2010
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