RJH60F4DPQ-A0_15 Datasheet, PDF (5/8 Pages) Renesas Technology Corp – 600 V - 30 A - IGBT High Speed Power Switching

RJH60F4DPQ-A0
Switching Characteristics (Typical) (1)
1000
V_CC = 400 V, V_GE = 15 V
Rg = 5 Ω, Tj = 150°C
tr includes the diode recovery
tf
100
td(off)
tr
td(on)
10
1
10
100
Collector Current I_C (A)
(Inductive load)
Switching Characteristics (Typical) (3)
240
V_CC = 400 V, V_GE = 15 V
200
I_C = 30 A, Rg = 5 Ω
tr includes the diode recovery
160 tr
120
td(off)
80 _tf
40 _td(on)
0
0 25 50 75 100 125 150
Junction Temperature Tj (°C)
(Inductive load)
Preliminary
Switching Characteristics (Typical) (2)
100000
10000
V_CC = 400 V, V_GE = 15 V
Rg = 5 Ω, Tj = 150°C
Eon includes the diode recovery
1000
100
10
1
Eoff
Eon
10
100 200
Collector Current I_C (A)
(Inductive load)
Switching Characteristics (Typical) (4)
1600
1200
V_CC = 400 V, V_GE = 15 V
I_C = 30 A, Rg = 5 Ω
Eon includes the diode recovery
Eoff
800
Eon
400
0
0 25 50 75 100 125 150
Junction Temperature Tj (°C)
(Inductive load)
R07DS0325EJ0200 Rev.2.00
Jul 22, 2011
Page 5 of 7